{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP32NM50N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP32NM50N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP32NM50N","factsUrl":"https://icboms.com/api/mcp/products/STP32NM50N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II, STP32NM50N, N-Channel MOSFET, 500 Vdss, 22 A Id, 130 mOhm Rds(on) @ 11A/10V, TO-220-3 through-hole, 190 W dissipation, ±25 Vgs max.","salesMarkdown":"## 500 V, 22 A N-channel — MDmesh™ II platform The STP32NM50N is an N-channel power MOSFET on ST’s MDmesh™ II technology, rated for 500 V drain-source breakdown and 22 A continuous drain current at 25 °C case temperature. It comes in a TO-220-3 through-hole package with a 130 mOhm maximum on-resistance specified at 11 A with a 10 V gate drive. At 62.5 nC total gate charge with a 10 V drive, the STP32NM50N presents a moderate capacitive load to the gate driver.","metaTitle":"STP32NM50N N-Channel MOSFET, 500 V, 22 A, TO-220-3","metaDescription":"STMicroelectronics STP32NM50N MDmesh™ II N-Channel MOSFET: 500 Vdss, 22 A Id, 130 mOhm Rds(on). Active, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP32","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"130mOhm @ 11A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"62.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1973 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"22A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.9800","priceTiers":[{"qty":1,"price":"$7.98000","currency":"USD"},{"qty":10,"price":"$7.20700","currency":"USD"},{"qty":100,"price":"$5.96680","currency":"USD"},{"qty":500,"price":"$5.53420","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7ca083336de91ef48c138f70ba1f3e55.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP32NM50N/alternatives.json"},"ai":{"faq":[{"question":"Is STP32NM50N equivalent to IRFP460?","answer":"Both are 500 V N-channel MOSFETs in TO-247 (IRFP460) versus TO-220 (STP32NM50N). The IRFP460 has a higher typical Rds(on) around 270 mOhm versus 130 mOhm for the STP32NM50N, and the gate charge differs. They are not pin-compatible due to different package footprints, so a board redesign is required to swap."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP32NM50N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP32NM50N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}