{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP32N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP32N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP32N65M5","factsUrl":"https://icboms.com/api/mcp/products/STP32N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ V series, N-Channel MOSFET, 650 V drain-source, 24 A continuous drain, 119 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, 150°C junction temperature.","salesMarkdown":"## 650 V N-channel MOSFET — MDmesh V series It comes in a TO-220-3 through-hole package. ## On-resistance and conduction losses at the operating point This is the figure to use when estimating conduction losses at the nominal load point — at lower currents the Rds(on) will be somewhat lower, but the 119 mOhm ceiling is what the thermal design should budget for. The drive voltage requirement of 10 V for the rated Rds(on) minimum means a standard 12 V gate drive rail is adequate; a 5 V logic-level drive will not fully enhance this device. This is a moderate figure for a 650 V, 24 A device — the gate driver must supply this charge each switching cycle, and the resulting switching losses depend on the driver's source/sink capability. The input capacitance of 3320 pF at 100 V drain-source gives a sense of the capacitive load the driver sees during the Miller plateau. For hard-switched topologies above 100 kHz, the switching losses from this gate charge should be checked against the thermal budget. This means STMicroelectronics has discontinued production and no further factory orders are accepted.","metaTitle":"STP32N65M5 N-Channel MOSFET, 650 V, 24 A, MDmesh V","metaDescription":"STP32N65M5 N-channel 650 V 24 A MOSFET from STMicroelectronics MDmesh V series. 119 mOhm Rds(on) at 10 V. TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP32N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"119mOhm @ 12A, 10V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"72 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"3320 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"24A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.6100","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c7d2a70c50d68ab6ebd445f23e674b82.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is STP32N65M5 obsolete and what is the replacement?","answer":"Yes, the STP32N65M5 is listed as Obsolete by STMicroelectronics. No official replacement order code is provided by the manufacturer. For a replacement, evaluate other 650 V N-channel MOSFETs in the MDmesh family or from competing vendors based on Rds(on), gate charge, and package requirements for your specific application."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP32N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP32N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}