{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP315N10F7","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP315N10F7","canonicalUrl":"https://icboms.com/stmicroelectronics/STP315N10F7","factsUrl":"https://icboms.com/api/mcp/products/STP315N10F7","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP315N10F7, N-Channel MOSFET, DeepGATE STripFET VII, 100 V Vdss, 2.7 mOhm Rds(on) at 60 A, 10 V, 180 A continuous drain, 315 W dissipation, TO-220-3, -55 to 175 °C.","salesMarkdown":"It is AEC-Q101 qualified, so it is production-validated for under-hood and chassis-domain environments where the junction temperature spans -55 to 175 °C. The 180 A continuous drain current and 315 W dissipation ceiling tell you this part is sized for the high-current bus, not a signal-level load. ## Gate charge and input capacitance — the switching budget A 180 nC total gate charge means the driver must supply that charge each switching cycle; at 100 kHz, the average gate-drive current is 18 mA. The input capacitance of 12800 pF sets the rise-time limit with a given driver source resistance. If you are pushing switching frequency above 50 kHz, budget for gate-drive power loss and verify the driver can source the peak current without slowing the edges. ## Package and mounting — TO-220 through-hole The STP315N10F7 comes in a standard TO-220-3 through-hole package. The tab is the drain, so the heatsink interface is electrically live — use an insulating pad or mica washer if the heatsink is grounded.","metaTitle":"STP315N10F7 N-Channel MOSFET, 100 V, 2.7 mOhm, TO-220","metaDescription":"STP315N10F7 N-Channel MOSFET, 100 V drain-source, 2.7 mOhm Rds(on) at 60 A, 10 V. AEC-Q101 qualified. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"Automotive, AEC-Q101, DeepGATE™, STripFET™ VII","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 250µA","Base Product Number":"STP315","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"2.7mOhm @ 60A, 10V","Power Dissipation (Max)":"315W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"180 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"12800 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"180A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.7900","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/f0dab29ad0f115e2f711a53c7e5ea7b2.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is STP315N10F7 automotive qualified?","answer":"Yes, the STP315N10F7 is listed as Automotive grade and AEC-Q101 qualified, making it suitable for automotive and high-reliability applications."},{"question":"What is the Rds(on) of STP315N10F7?","answer":"The maximum Rds(on) is 2.7 mOhm at 60 A drain current with a 10 V gate-to-source voltage."},{"question":"What package does STP315N10F7 come in?","answer":"It is supplied in a TO-220-3 through-hole package."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP315N10F7","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP315N10F7 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}