{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP310N10F7","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP310N10F7","canonicalUrl":"https://icboms.com/stmicroelectronics/STP310N10F7","factsUrl":"https://icboms.com/api/mcp/products/STP310N10F7","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP310N10F7, DeepGATE STripFET VII N-channel MOSFET, 100 V drain-source, 180 A continuous drain, 2.7 mOhm Rds(on) at 60 A, 10 V, 180 nC gate charge, TO-220-3 through-hole package, -55 to 175 °C junction temperature.","salesMarkdown":"The STP310N10F7: The on-resistance is specified at 2.7 mOhm maximum at 60 A with 10 V gate drive — this is the conduction loss figure that sets the I²R dissipation in high-current paths like synchronous rectifiers, motor-drive half-bridges, and battery isolation switches. ## 180 A continuous drain — current handling and thermal budget The 180 A continuous drain rating at Tc=25°C is package-limited by the TO-220-3's thermal resistance; real-world derating applies above 25 °C case temperature. ## Through-hole TO-220-3 — mounting and thermal interface The TO-220-3 through-hole package with a tin-plated copper tab is designed for bolt-down or clip mounting to a heatsink. The tab is electrically common with the drain — insulation is needed if the heatsink is grounded.","metaTitle":"STP310N10F7 MOSFET, 100 V, 180 A, 2.7 mOhm Rds(on)","metaDescription":"STP310N10F7 N-channel MOSFET, 100 Vdss, 180 A continuous drain, 2.7 mOhm Rds(on) at 60 A. TO-220-3 package, active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"DeepGATE™, STripFET™ VII","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.8V @ 250µA","Base Product Number":"STP310","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"2.7mOhm @ 60A, 10V","Power Dissipation (Max)":"315W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"180 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"12800 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"180A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.8800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b723f3c9274f7741aa0c8b2e5d3f6fe8.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP310N10F7/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP310N10F7?","answer":"The maximum Rds(on) is 2.7 mOhm at 60 A drain current with 10 V gate drive, measured at 25 °C junction temperature. This is the conduction loss figure for high-current switching applications."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP310N10F7","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP310N10F7 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}