{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP30NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP30NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STP30NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STP30NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II series STP30NM60ND, N-Channel MOSFET, 600 V Vdss, 25 A continuous drain, 130 mΩ Rds(on) at 12.5 A, 10 V gate drive, 100 nC gate charge, TO-220-3 through-hole package.","salesMarkdown":"## 600 V N-Channel MOSFET for high-voltage switching ## 130 mΩ Rds(on) — conduction loss and thermal design The STP30NM60ND is listed as Obsolete on the manufacturer's lifecycle status. This means STMicroelectronics no longer produces the device, and no official successor part number has been published in the available records. Procurement for new designs should look at current-production 600 V N-Channel MOSFETs in the FDmesh™ or MDmesh™ families from ST, or equivalent parts from competitors such as Infineon CoolMOS or ON Semiconductor, ensuring pin-compatible TO-220 packages and similar Rds(on) and gate charge ratings.","metaTitle":"STP30NM60ND N-Channel MOSFET, 600 V, 25 A, TO-220","metaDescription":"STP30NM60ND N-Channel MOSFET from STMicroelectronics FDmesh™ II series. 600 V Vdss, 25 A continuous drain, 130 mΩ Rds(on). TO-220-3 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP30N","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"130mOhm @ 12.5A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"100 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2800 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/29f15e566ee061056a68c373c9687472.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP30NM60ND/alternatives.json"},"ai":{"faq":[{"question":"Is STP30NM60ND obsolete and what is the replacement?","answer":"Yes, the STP30NM60ND is obsolete per the manufacturer's lifecycle status. No official replacement order code has been published. For new designs, consider current-production 600 V N-Channel MOSFETs in the FDmesh™ or MDmesh™ families from STMicroelectronics, or equivalent parts from Infineon (CoolMOS) or ON Semiconductor, ensuring a TO-220 package and comparable 130 mΩ Rds(on) and 100 nC gate charge."},{"question":"Does STP30NM60ND have a TO-220 package?","answer":"Yes, the STP30NM60ND is supplied in a TO-220-3 through-hole package, with the supplier device package listed as TO-220. This is a standard three-lead power package with a metal tab for heatsink mounting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP30NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP30NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}