{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP30NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP30NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP30NM60N","factsUrl":"https://icboms.com/api/mcp/products/STP30NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II series, STP30NM60N, N-Channel MOSFET, 600 V Vdss, 130 mOhm Rds(on) @ 12.5 A, 10 V, 25 A continuous drain, TO-220-3 through-hole, 190 W dissipation.","salesMarkdown":"## 600 V MDmesh II N-channel — what you get in the TO-220 The STP30NM60N is a 600 V N-channel power MOSFET from STMicroelectronics' MDmesh™ II series, built with a vertical-structure process that reduces on-resistance per area. The TO-220-3 through-hole package means it bolts to a heatsink with a single screw — no reflow, no paste, just a dab of thermal grease and a torque driver. ST lists the STP30NM60N as Obsolete. For a BOM that already qualifies this MOSFET, the procurement path is spot-market sourcing with lot traceability and parametric verification. ## Gate charge and switching — 91 nC at 10 V ## Rework and mounting — through-hole, one screw, no fuss The TO-220-3 is the easiest power package to rework by hand. No hot-air profile, no paste stencil — just a soldering iron, a desoldering pump, and a new part. The tab is the drain, so the heatsink pad is live at 600 V; an insulating washer and thermal pad are mandatory if the heatsink is grounded. The 150°C junction temperature rating is the absolute maximum — derate the 190 W dissipation linearly above 25°C case temperature using the datasheet's thermal resistance figure. The package stands up to multiple soldering cycles as long as the leads are not bent more than once.","metaTitle":"STP30NM60N N-Channel MOSFET, 600 V, 130 mOhm, TO-220","metaDescription":"STP30NM60N N-channel MDmesh II MOSFET, 600 V Vdss, 130 mOhm Rds(on), 25 A Id, TO-220-3. Quoted on request.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP30N","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"130mOhm @ 12.5A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"91 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2700 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c95cf3b6b6fdad2682996f534839d22f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP30NM60N/alternatives.json"},"ai":{"faq":[{"question":"Is STP30NM60N obsolete?","answer":"Yes, ST lists the STP30NM60N as Obsolete. No factory last-time-buy is active. The part is available through the surplus and broker channel, sourced to order."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP30NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP30NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}