{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP2NK60Z","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP2NK60Z","canonicalUrl":"https://icboms.com/stmicroelectronics/STP2NK60Z","factsUrl":"https://icboms.com/api/mcp/products/STP2NK60Z","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ N-Channel MOSFET, 600V Vdss, 1.4A Id, 8Ohm Rds(on) @ 700mA, TO-220-3, -55°C~150°C TJ.","salesMarkdown":"## 600 V N-channel MOSFET for off-line power conversion The STP2NK60Z is a 600 V N-channel MOSFET from ST's SuperMESH series, built with a proprietary technology that balances low gate charge and avalanche ruggedness. ## 8 Ohm Rds(on) — conduction loss in low-current rails The 4.5 V gate threshold at 50 µA means a 10 V drive is needed to fully enhance the channel and achieve the rated Rds(on); a logic-level gate signal will not fully turn it on. ST lists the STP2NK60Z as Obsolete. There is no LTB window to plan for; the part is already discontinued, so qualification of a replacement should be treated as a priority for any new production run.","metaTitle":"ST STP2NK60Z N-Channel MOSFET, 600V, 1.4A, TO-220","metaDescription":"STMicroelectronics STP2NK60Z SuperMESH N-channel MOSFET, 600V Vdss, 1.4A Id, 8 Ohm Rds(on), TO-220. RFQ for current pricing.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STP2N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"8Ohm @ 700mA, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"10 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"170 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"1.4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP2NK60Z/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP2NK60Z?","answer":"ST has not published an official successor order code for the STP2NK60Z. For a pin-compatible alternative in the same TO-220 package, look for a 600 V N-channel MOSFET with similar Rds(on) and gate charge from ST's current SuperMESH or MDmesh families, or from competitors such as Infineon or Vishay. Qualification testing is recommended before substituting into a production BOM."},{"question":"What is the Rds(on) of STP2NK60Z?","answer":"The maximum Rds(on) is 8 Ohms at a drain current of 700 mA and a gate-source voltage of 10 V."},{"question":"What is the Vgs threshold of STP2NK60Z?","answer":"The maximum gate threshold voltage is 4.5 V at a drain current of 50 µA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP2NK60Z","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP2NK60Z when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}