{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP28N60DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP28N60DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP28N60DM2","factsUrl":"https://icboms.com/api/mcp/products/STP28N60DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP28N60DM2, MDmesh DM2 series, N-Channel MOSFET, 600 Vdss, 21 A Id, 160 mOhm Rds(on) at 10 V, 34 nC Qg, TO-220-3, -55 to 150 °C junction.","salesMarkdown":"## 600 V N-channel — where it lands in a power stage The STP28N60DM2: It comes in a TO-220-3 through-hole package, which bolts to a heatsink or chassis for thermal management. At 160 mOhm max with 10 V gate drive, the STP28N60DM2's on-resistance is competitive for a 600 V, 21 A class part in a TO-220. The 34 nC total gate charge at 10 V means a standard gate-driver IC (e.g., 1 A peak source/sink) can switch it at 100 kHz with under 4 mA average drive current — no external booster needed. Input capacitance is 1500 pF at 100 V drain-source, which keeps the Miller plateau manageable for a simple RC gate-drive network. ## Thermal budget in a real enclosure The 170 W maximum power dissipation at case temperature assumes an infinite heatsink — in practice, a TO-220 bolted to a 5 °C/W heatsink in still air at 50 °C ambient will dissipate about 20–25 W before the junction hits 125 °C. The 21 A continuous rating at 25 °C case derates to roughly 13 A at 100 °C case (following the typical 0.65× derating for a 100 °C rise). ROHS3 compliant.","metaTitle":"STP28N60DM2 N-Channel MOSFET, 600V 21A TO-220","metaDescription":"STP28N60DM2 N-channel 600V 21A MOSFET, MDmesh DM2 series, 160mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ DM2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP28","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"160mOhm @ 10.5A, 10V","Power Dissipation (Max)":"170W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1500 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"21A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.7500","priceTiers":[{"qty":1,"price":"$3.93000","currency":"USD"},{"qty":10,"price":"$3.53200","currency":"USD"},{"qty":100,"price":"$2.89380","currency":"USD"},{"qty":500,"price":"$2.46344","currency":"USD"},{"qty":1000,"price":"$2.45000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/579cd6237ac3aca9a7994f07f4cd6d5e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP28N60DM2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP28N60DM2?","answer":"Maximum on-resistance is 160 mOhm at 10.5 A drain current with 10 V gate-source drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP28N60DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP28N60DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}