{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP26NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP26NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STP26NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STP26NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II series, N-Channel MOSFET, 600 V drain-source, 21 A continuous drain, 175 mOhm Rds(on) at 10 V, 54.6 nC gate charge, TO-220-3 through-hole package.","salesMarkdown":"## 600 V, 21 A N-channel MOSFET — FDmesh™ II in TO-220 The STP26NM60ND: Through-hole TO-220-3 package. At 21 A, conduction loss will be higher than the Rds(on) figure alone suggests because the current exceeds the test condition — expect the effective resistance to rise with junction temperature. For a 150 W PFC stage running at 100 kHz, the switching loss from the 54.6 nC gate charge will dominate over conduction loss, so the low Qg is the more important parameter here. For existing BOM lines, the only sourcing channel is the independent distribution market — surplus inventory, new-old-stock, or broker-sourced units. ## Sourcing the STP26NM60ND today Because the part is obsolete, standard distributor stock is depleted. We source the STP26NM60ND through our independent supply network — each unit is verified against the original manufacturer specifications before shipment.","metaTitle":"STP26NM60ND N-Channel MOSFET, 600 V, 21 A, FDmesh™ II","metaDescription":"STP26NM60ND N-channel MOSFET, 600 Vdss, 21 A continuous drain, 175 mOhm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP26N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"175mOhm @ 10.5A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"54.6 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1817 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"21A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.7500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/3fe8f63e238a30ee8e6628cc08063083.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP26NM60ND/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP26NM60ND?","answer":"STMicroelectronics has not published an official successor for the STP26NM60ND. Several manufacturers offer parts in this voltage and current class, but a pin-compatible substitute requires checking the footprint and drive voltage compatibility."},{"question":"What is the Rds(on) of STP26NM60ND?","answer":"The maximum Rds(on) is 175 mOhm at 10.5 A drain current with 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP26NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP26NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}