{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP25NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP25NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP25NM60N","factsUrl":"https://icboms.com/api/mcp/products/STP25NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP25NM60N, N-Channel MOSFET, MDmesh™ II series, 600 V Vdss, 21 A Id, 160 mOhm Rds(on) at 10 V, TO-220-3 package, Through Hole.","salesMarkdown":"STMicroelectronics lists the STP25NM60N as Obsolete. Stock that surfaces should be date-code checked and preferably from a known production date window; mystery lots with no provenance carry a higher counterfeit risk on an obsolete device. ## Key ratings for the switching design The 600 V Vdss gives a comfortable derating margin for universal-input (85–265 VAC) PFC stages where the bulk rail sits around 400 VDC. Input capacitance is 2400 pF at 50 V drain bias, which is moderate for this voltage class.","metaTitle":"STP25NM60N N-Channel MOSFET, 600V, 21A, MDmesh II, TO-220","metaDescription":"STP25NM60N N-Channel MOSFET from STMicroelectronics, 600V Vdss, 21A Id, 160mOhm Rds(on). MDmesh II technology.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP25N","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"160mOhm @ 10.5A, 10V","Power Dissipation (Max)":"160W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"84 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2400 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"21A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0ee1080256e2d26d1a94101f7e0f4614.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP25NM60N/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP25NM60N?","answer":"No official replacement order code is listed by STMicroelectronics. A functional replacement requires a 600 V N-channel MOSFET in TO-220 with similar Rds(on) and gate charge. The STP25NM60N uses MDmesh II super-junction technology, so a modern MDmesh V or MDmesh K5 part from ST, or an equivalent from Infineon's CoolMOS series, would be the starting point for a parametric cross — but each candidate must be validated for gate-drive voltage, switching speed, and thermal performance in the specific application."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP25NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP25NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}