{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP25N60M2-EP","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP25N60M2-EP","canonicalUrl":"https://icboms.com/stmicroelectronics/STP25N60M2-EP","factsUrl":"https://icboms.com/api/mcp/products/STP25N60M2-EP","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M2-EP, N-Channel MOSFET, 600 V Vdss, 18 A Id, 188 mOhm Rds(on) at 10 V, 29 nC Qg, TO-220-3 through hole, -55 to 150 °C junction.","salesMarkdown":"STP25N60M2-EP N-channel MOSFET, 600 V Vdss, 18 A Id, 188 mOhm Rds(on) at 10 V, TO-220-3 through-hole. ## On-resistance, gate charge, and the thermal budget The 29 nC total gate charge at 10 V keeps gate-drive losses modest in hard-switched topologies — a 100 kHz switching frequency draws about 2.9 mA average from the driver, well within a standard gate-driver IC's capability. The 150 W power dissipation at the case is the package limit, but the real thermal headroom depends on your heatsink and ambient. The -55 to 150 °C junction range covers industrial and military-temperature environments; the 150 °C Tj(max) is the derating ceiling for the 150 W Pd figure. Input capacitance is 1090 pF at 100 V drain — a moderate number that does not force an oversized gate resistor to tame ringing, but still benefits from a gate-loop layout with a low-inductance return path. ROHS3 compliant. The TO-220 through-hole package ships in Tube form.","metaTitle":"STP25N60M2-EP N-Channel MOSFET, 600V, 18A, TO-220","metaDescription":"STP25N60M2-EP N-channel MOSFET, 600V Vdss, 18A Id, 188mOhm Rds(on) at 10V. TO-220 through-hole. Active production.","metaKeywords":null},"attributes":{"series":"MDmesh™ M2-EP","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2-EP","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STP25","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"188mOhm @ 9A, 10V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"29 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1090 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.9200","priceTiers":[{"qty":1,"price":"$2.92000","currency":"USD"},{"qty":10,"price":"$2.61900","currency":"USD"},{"qty":100,"price":"$2.14600","currency":"USD"},{"qty":500,"price":"$1.82682","currency":"USD"},{"qty":1000,"price":"$1.81685","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/61db09d7c3d465a3737eabe52f2362ae.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP25N60M2-EP/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP25N60M2-EP?","answer":"Maximum on-resistance is 188 mOhm at 9 A drain current with 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP25N60M2-EP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP25N60M2-EP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}