{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP24NM65N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP24NM65N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP24NM65N","factsUrl":"https://icboms.com/api/mcp/products/STP24NM65N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II series, STP24NM65N, N-Channel MOSFET, 650 V Vdss, 19 A Id, 190 mOhm Rds(on) @ 9.5 A/10 V, 70 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"The STP24NM65N: The 190 mOhm Rds(on) maximum at 9.5 A and 10 V Vgs defines the conduction loss at rated current. The 160 W maximum power dissipation (Tc) provides headroom but demands a properly sized heatsink. The STP24NM65N is marked obsolete by STMicroelectronics. The last-time-buy window has closed, and the part is no longer available through the factory. Supply is limited to surplus and broker channels.","metaTitle":"STP24NM65N N-Channel MOSFET, 650 V, 19 A, MDmesh II, TO-220","metaDescription":"STP24NM65N N-channel 650 V MOSFET from STMicroelectronics MDmesh II series. 190 mOhm Rds(on) at 9.5 A, 10 V gate drive. 19 A continuous drain, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP24N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 9.5A, 10V","Power Dissipation (Max)":"160W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"70 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"2500 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"19A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/111dfb927fa7d31bb4d54ef7639d9f77.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP24NM65N/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP24NM65N?","answer":"STMicroelectronics has not published an official direct replacement for the STP24NM65N. A pin-compatible N-channel MOSFET from the same MDmesh II family with a 650 V drain-source rating and similar Rds(on) and gate charge should be evaluated for new designs. Qualification testing is recommended before committing the BOM line."},{"question":"What is the Rds(on) of STP24NM65N?","answer":"The maximum on-resistance is 190 mOhm at a drain current of 9.5 A and a gate-source voltage of 10 V. This is the figure to use for worst-case conduction loss calculations in the thermal design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP24NM65N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP24NM65N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}