{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP24N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP24N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP24N60M2","factsUrl":"https://icboms.com/api/mcp/products/STP24N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP24N60M2, MDmesh™ II Plus series, N-channel MOSFET, 600 V Vdss, 18 A Id, 190 mOhm Rds(on), TO-220-3 through-hole, tube.","salesMarkdown":"## 600 V, 18 A switching — what the ratings mean for the BOM The STP24N60M2 is a 600 V drain-source, 18 A continuous-drain N-channel MOSFET from ST's MDmesh™ II Plus series — a super-junction family designed to cut conduction and switching losses in high-voltage offline converters, PFC stages, and flyback topologies. Input capacitance is 1060 pF at 100 V drain bias — this governs the switching speed and the driver's peak current requirement. The 4 V typical threshold at 250 µA provides noise margin against spurious turn-on in a half-bridge leg. ## TO-220 package and thermal integration The through-hole TO-220-3 package is the workhorse for single-ended power stages up to 150 W. The tab is the drain — a standard heatsink with a TO-220 clip or screw mount is expected. Drive voltage is specified at 10 V for minimum Rds(on), and the gate is rated to ±25 V maximum — a standard 12-15 V gate-driver supply is safe, and a 15 V Zener clamp across the gate-source is common practice in noisy environments.","metaTitle":"STP24N60M2 STMicro N-Ch MOSFET, 600 V, 18 A, TO-220","metaDescription":"STP24N60M2 N-channel 600 V 18 A MOSFET in TO-220, MDmesh II Plus, 190 mOhm Rds(on), 29 nC Qg. Active, ROHS3. Sourced per RFQ.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP24","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 9A, 10V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"29 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1060 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.7600","priceTiers":[{"qty":1,"price":"$2.76000","currency":"USD"},{"qty":10,"price":"$2.31500","currency":"USD"},{"qty":100,"price":"$1.87250","currency":"USD"},{"qty":500,"price":"$1.66448","currency":"USD"},{"qty":1000,"price":"$1.42521","currency":"USD"},{"qty":2000,"price":"$1.34199","currency":"USD"},{"qty":5000,"price":"$1.28750","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/24f365032898b43014f0b674531bbc3c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP24N60M2/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP24N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP24N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}