{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP23NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP23NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STP23NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STP23NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II STP23NM60ND, N-Channel MOSFET, 600 V Vdss, 19.5 A Id, 180 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.","salesMarkdown":"## 600 V N-channel MOSFET in the FDmesh™ II family The STP23NM60ND: It is rated for a drain-to-source voltage of 600 V and a continuous drain current of 19.5 A at a case temperature of 25°C. ## Key ratings for the BOM decision The 600 V drain-source breakdown voltage suits power-factor-correction stages, flyback converters, and two-switch forward topologies in off-line supplies. The 19.5 A continuous drain rating at 25°C case temperature must be derated as the case temperature rises; the maximum junction temperature is 150°C. ## Obsolete — plan the replacement now For a production BOM, you will need to qualify a replacement. The official successor is not recorded in the available lifecycle data, so treat this as a last-time-buy or replacement-qualification situation. Sourcing is through independent distributors who hold surplus inventory or can locate stock from the open market.","metaTitle":"STP23NM60ND N-Channel MOSFET, 600 V, 19.5 A, FDmesh™ II","metaDescription":"STP23NM60ND N-Channel MOSFET from STMicroelectronics, 600 V drain-source, 19.5 A continuous drain, 180 mOhm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP23N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"180mOhm @ 10A, 10V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"69 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2100 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"19.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.1200","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP23NM60ND/alternatives.json"},"ai":{"faq":[{"question":"What are the specifications of STP23NM60ND?","answer":"It is packaged in a through-hole TO-220-3 and operates with a maximum junction temperature of 150°C."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP23NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP23NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}