{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP22N60M6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP22N60M6","canonicalUrl":"https://icboms.com/stmicroelectronics/STP22N60M6","factsUrl":"https://icboms.com/api/mcp/products/STP22N60M6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M6 N-Channel MOSFET, STP22N60M6, 600 V Vdss, 15 A Id, 230 mOhm Rds(on) @ 7.5 A/10 V, 20 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## Gate charge and on-resistance — sizing the gate drive and thermal budget The 230 mOhm Rds(on) at 10 V drive produces about 3.5 W conduction loss at 7.5 A — within the 130 W package dissipation limit, but the TO-220 must be bolted to a heatsink for any continuous current above a few amps. ## TO-220 through-hole — mounting and thermal interface The 130 W maximum power dissipation assumes the tab is mounted to an infinite heatsink with thermal grease or a pad. For real-world designs, derate the current based on the junction-to-case thermal resistance — the 15 A rating at 25°C case temperature drops significantly above 100°C junction.","metaTitle":"STP22N60M6 N-Channel MOSFET, 600 V, 15 A, TO-220","metaDescription":"STP22N60M6 N-channel MOSFET from STMicroelectronics MDmesh M6 series: 600 V Vdss, 15 A Id, 230 mOhm Rds(on), 20 nC gate charge.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STP22","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"230mOhm @ 7.5A, 10V","Power Dissipation (Max)":"130W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"800 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"15A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7766","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP22N60M6/alternatives.json"},"ai":{"faq":[{"question":"What is the maximum Vgs of STP22N60M6?","answer":"The maximum gate-to-source voltage is ±25 V."},{"question":"What is the Rds(on) of STP22N60M6?","answer":"The maximum on-resistance is 230 mOhm at a drain current of 7.5 A and a gate-to-source voltage of 10 V."},{"question":"What is the closest pin-compatible alternative to STP22N60M6?","answer":"Pin-compatible alternatives exist within the STP22N60x6 family — parts sharing the same TO-220 footprint and base product number STP22. The exact replacement depends on the required Rds(on) and current rating; review the MDmesh M6 series parametric table to match your conduction loss target."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP22N60M6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP22N60M6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}