{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP21NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP21NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP21NM60N","factsUrl":"https://icboms.com/api/mcp/products/STP21NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP21NM60N, MDmesh™ N-Channel MOSFET, 600 Vdss, 17 A continuous drain, 220 mOhm Rds(on) at 10 V, TO-220-3 through-hole, 150°C junction temperature.","salesMarkdown":"## 600 V, 17 A, 220 mΩ — hard-switching workhorse, now obsolete In a TO-220 through-hole package, it targets power-factor-correction stages, flyback converters, and two-switch forward converters in industrial and consumer SMPS designs. STMicroelectronics lists the STP21NM60N as obsolete. Date codes will vary; typical stock carries date codes from the final production runs. Counterfeit screening is advised when buying through the spot market — independent brokers can provide lot trace and X-ray/decapsulation reports on request. ## Key ratings and their design impact The 600 V drain-source breakdown voltage gives 80% derating margin on a 400 V DC bus — adequate for single-ended PFC and flyback stages with reasonable leakage inductance spikes. The 17 A continuous drain current is rated at 25°C case temperature; real-world current capability is lower and follows the 140 W power dissipation ceiling. The 220 mΩ Rds(on) at 10 V gate drive means at 8.5 A the conduction loss is about 16 W — the TO-220 package with a proper heatsink is mandatory. The 1900 pF input capacitance at 50 V is moderate — a typical 1 A gate driver will switch it in the 30–50 ns range.","metaTitle":"STP21NM60N N-Channel MOSFET, 600V 17A TO-220, Obsolete","metaDescription":"STP21NM60N N-Channel 600V 17A MOSFET in TO-220. 220mOhm Rds(on) at 10V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP21N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"220mOhm @ 8.5A, 10V","Power Dissipation (Max)":"140W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"66 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1900 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"17A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9158d166ca39bcc704fe3cf0b7b47abd.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP21NM60N/alternatives.json"},"ai":{"faq":[{"question":"Is STP21NM60N obsolete?","answer":"Yes, STMicroelectronics lists the STP21NM60N as obsolete. No official replacement part number has been published."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP21NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP21NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}