{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP21NM50N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP21NM50N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP21NM50N","factsUrl":"https://icboms.com/api/mcp/products/STP21NM50N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP21NM50N, MDmesh™ II Series, N-Channel MOSFET, 500 V drain-source, 18 A continuous drain, 190 mOhm Rds(on) at 9 A and 10 V, TO-220-3 through-hole package, 150 °C junction temperature.","salesMarkdown":"Any BOM line using this part needs a validated replacement or a bridge buy from spot inventory. ## 500 V, 190 mOhm, 18 A — the power-switching envelope This is a 500 V N-channel MOSFET from ST's MDmesh™ II family, built for high-voltage switched-mode power supplies, power-factor-correction stages, and motor-drive inverters. Gate charge is 65 nC at 10 V, a figure that sets the drive power in a high-frequency converter. ## TO-220 package — through-hole mounting and thermal interface The junction-to-case thermal path is the main dissipation route — the 140 W power rating assumes a good thermal interface to a heatsink. No exposed pad or surface-mount option exists; board assembly is manual or wave-solder.","metaTitle":"STP21NM50N N-Channel MOSFET, 500V, 190mOhm, MDmesh II","metaDescription":"STP21NM50N N-Channel MOSFET, 500V drain-source, 190mOhm Rds(on) at 9A, 18A continuous drain. MDmesh II series, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP21N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 9A, 10V","Power Dissipation (Max)":"140W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"65 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1950 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.6800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d011e5b826abe5b1669ce1887cb4cc1d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP21NM50N/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP21NM50N?","answer":"No official replacement part number is recorded in the lifecycle data. A same-function 500 V N-channel MOSFET from ST's current MDmesh series (e.g., MDmesh V or MDmesh K5 families) should be evaluated for pin-compatibility and parametric fit. The TO-220 footprint is standard, but gate charge, Rds(on), and switching performance will differ."},{"question":"What is the Rds(on) of STP21NM50N?","answer":"The maximum Rds(on) is 190 mOhm at a drain current of 9 A and a gate-source voltage of 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP21NM50N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP21NM50N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}