{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP21N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP21N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STP21N65M5","factsUrl":"https://icboms.com/api/mcp/products/STP21N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ V, N-Channel MOSFET, 650 V drain-source, 17 A continuous drain, 190 mOhm Rds(on) at 10 V, 50 nC gate charge, TO-220-3 through-hole package.","salesMarkdown":"## 650 V N-channel MOSFET in TO-220 — STP21N65M5 ## Gate drive and switching behaviour The STP21N65M5 requires a 10 V gate drive to achieve the specified 190 mOhm Rds(on). Gate charge is 50 nC at 10 V, which is moderate for a 650 V device in this current class — a standard gate-driver IC with 1 A to 2 A peak output will switch it cleanly at frequencies typical of hard-switched PFC stages. Input capacitance measures 1950 pF at 100 V drain-source bias, giving a reasonable Miller plateau for designers to budget dead-time and cross-conduction margins. ## Thermal and package considerations Maximum power dissipation is 125 W at case temperature, and the junction temperature rating is 150 °C. The TO-220 package with a metal tab is intended for heatsink mounting — without a heatsink, the continuous current must be derated significantly. The through-hole form factor suits point-of-load and bulk-capacitor layouts where a surface-mount part would complicate thermal management.","metaTitle":"STP21N65M5 N-Channel MOSFET, 650 V, 17 A, TO-220","metaDescription":"STMicroelectronics STP21N65M5 N-channel MOSFET, 650 V Vdss, 17 A continuous drain, 190 mOhm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP21","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 8.5A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"50 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1950 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"17A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.9000","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/adb8affee800b1de8970ff75f289394a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP21N65M5/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to STP21N65M5?","answer":"Within the same MDmesh™ V family, parts with similar voltage and current ratings share the same TO-220 footprint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP21N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP21N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}