{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP20NM60FD","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP20NM60FD","canonicalUrl":"https://icboms.com/stmicroelectronics/STP20NM60FD","factsUrl":"https://icboms.com/api/mcp/products/STP20NM60FD","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ N-Channel MOSFET, STP20NM60FD, 600V Vdss, 20A Id, 290mOhm Rds(on) @ 10V, TO-220-3, Through Hole, -65°C~150°C TJ.","salesMarkdown":"## What this 600 V, 20 A N-channel MOSFET is for The STP20NM60FD: The FDmesh technology is ST's fast-recovery body-diode variant, which reduces reverse-recovery charge and ringing when the MOSFET's body diode conducts in a bridge leg — a common failure point in half-bridge and full-bridge converters. The 600 V Vdss gives you about 100 V of derating margin against a 400 V DC bus (rectified 230 VAC), which is the standard practice for reliable offline supplies. Gate charge is 37 nC at 10 V. ## Package and mounting — TO-220 through-hole The STP20NM60FD comes in a standard TO-220-3 through-hole package. The tab is electrically live, so an insulating pad and bushing are required if the heatsink is grounded.","metaTitle":"ST STP20NM60FD N-Channel MOSFET, 600V, 20A, TO-220","metaDescription":"STMicroelectronics STP20NM60FD N-Channel MOSFET, 600V Vdss, 20A Id, 290mOhm Rds(on), TO-220 package, FDmesh series. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP20","Operating Temperature":"-65°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"290mOhm @ 10A, 10V","Power Dissipation (Max)":"192W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"37 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1300 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.5700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/61e5413d38189832fe28021c5d095217.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP20NM60FD/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs threshold of STP20NM60FD?","answer":"The maximum gate threshold voltage is 5 V at 250 µA drain current. Typical parts turn on lower, but the 5 V max ensures a 10 V gate drive fully enhances the device."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP20NM60FD","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP20NM60FD when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}