{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP20NM50FD","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP20NM50FD","canonicalUrl":"https://icboms.com/stmicroelectronics/STP20NM50FD","factsUrl":"https://icboms.com/api/mcp/products/STP20NM50FD","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ N-Channel MOSFET, STP20NM50FD, 500 Vdss, 20 A continuous drain (Tc), 250 mOhm Rds(on) at 10 V, 53 nC gate charge, TO-220-3 through-hole package, -65°C to 150°C junction temperature.","salesMarkdown":"## 500 V, 20 A N-Channel MOSFET in TO-220 — FDmesh fast-recovery diode Packaged in a through-hole TO-220-3, it delivers 192 W maximum power dissipation. The FDmesh technology integrates a fast-recovery body diode, which reduces reverse-recovery charge in bridge topologies such as half-bridge and full-bridge converters. Input capacitance is 1380 pF at 25 V drain-source, a figure to consider when sizing the gate-drive source impedance for rise-time control. STMicroelectronics lists the STP20NM50FD as Active. For BOM planning, the active status removes the supply-risk flag that obsolete or NRND parts carry.","metaTitle":"STP20NM50FD N-Channel MOSFET, 500 V, 20 A, TO-220","metaDescription":"STP20NM50FD N-Channel MOSFET from STMicroelectronics FDmesh series. 500 Vdss, 20 A continuous drain, 250 mOhm Rds(on) at 10 V. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP20","Operating Temperature":"-65°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"250mOhm @ 10A, 10V","Power Dissipation (Max)":"192W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"53 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1380 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.7200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c8dab5a44642d5a4f5e9ae76c4b781d5.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP20NM50FD/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs threshold of STP20NM50FD?","answer":"Maximum gate threshold voltage is 5 V at 250 µA drain current."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP20NM50FD","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP20NM50FD when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}