{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP20NM50","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP20NM50","canonicalUrl":"https://icboms.com/stmicroelectronics/STP20NM50","factsUrl":"https://icboms.com/api/mcp/products/STP20NM50","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ STP20NM50, N-Channel MOSFET, 500 Vdss, 20 A continuous drain, 250 mOhm Rds(on) at 10 V, 56 nC gate charge, TO-220-3 through-hole, -65 to 150 °C operating junction.","salesMarkdown":"## 500 V, 20 A N-channel — MDmesh™ for offline power stages Actual on-resistance increases with temperature — the normalised curve in the datasheet shows roughly a 1.5× multiplier at 125 °C junction, so the conduction loss at full load and high ambient is closer to 375 mOhm. The 56 nC total gate charge at 10 V means a standard 1 A gate driver can switch this FET at about 18 kHz before the average gate-drive current exceeds 1 A; above that frequency, a higher-current driver or a gate-resistor trade-off is needed. ## TO-220-3 — through-hole mounting and heatsink interface The TO-220-3 through-hole package has a metal tab for heatsink attachment with a single M3 screw.","metaTitle":"STP20NM50 MOSFET N-Ch 500V 20A TO-220, MDmesh™","metaDescription":"STP20NM50 N-channel 500V 20A MOSFET in TO-220. 250 mOhm Rds(on) at 10V. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP20","Operating Temperature":"-65°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"250mOhm @ 10A, 10V","Power Dissipation (Max)":"192W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"56 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1480 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.6800","priceTiers":[{"qty":1,"price":"$5.68000","currency":"USD"},{"qty":10,"price":"$4.76800","currency":"USD"},{"qty":100,"price":"$3.85690","currency":"USD"},{"qty":500,"price":"$3.42834","currency":"USD"},{"qty":1000,"price":"$2.93552","currency":"USD"},{"qty":2000,"price":"$2.76410","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c76f5656c84c587073c8fcd1addbde51.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP20NM50/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP20NM50?","answer":"250 mOhm maximum at Vgs=10 V and Id=10 A, 25 °C junction. The value rises with junction temperature — expect about 375 mOhm at 125 °C junction."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP20NM50","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP20NM50 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}