{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP200NF04","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP200NF04","canonicalUrl":"https://icboms.com/stmicroelectronics/STP200NF04","factsUrl":"https://icboms.com/api/mcp/products/STP200NF04","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP200NF04, STripFET™ II N-Channel MOSFET, 40V Vdss, 120A Id, 3.7mOhm Rds(on), TO-220-3, -55°C to 175°C.","salesMarkdown":"## 40 V, 120 A N-channel — what the TO-220 carries The STMicroelectronics STP200NF04 is a STripFET™ II N-channel power MOSFET in a through-hole TO-220-3 package. The 310 W power dissipation ceiling at the case and 175°C maximum junction temperature place it in the high-current, high-temperature switching class — think motor drives, battery isolators, DC-DC converters in industrial or automotive auxiliary loads where the ambient can push past 85°C. At 90 A the on-resistance sits at 3.7 mOhm maximum with 10 V gate drive. That is roughly 30 W conduction loss at full current — the 310 W package dissipation rating gives headroom, but only with a serious heatsink and good thermal interface. The gate charge of 210 nC at 10 V means the driver needs to source about 2.1 A peak to switch in the 100 ns range; a weak gate-drive IC will stretch the switching edges and push losses into the linear region. Input capacitance of 5100 pF at 25 V Vds is moderate for a 120 A FET — the Miller plateau is manageable with a standard totem-pole driver. ## Obsolete — channel reality for the STP200NF04 ## 175°C junction — where it runs The 175°C ceiling is 25°C higher than the common 150°C max — that extra margin matters in sealed enclosures, engine-bay compartments, or any spot where the ambient hits 105°C and the self-heating from 120 A pulses stacks on top. The threshold voltage of 4 V maximum at 250 µA drain current is standard for a 10 V gate-drive part; at lower gate voltages the Rds(on) climbs steeply, so do not try to drive this FET from a 3.3 V logic signal without a level shifter.","metaTitle":"STP200NF04 STMicroelectronics N-Channel MOSFET","metaDescription":"STP200NF04 N-Channel MOSFET from STMicroelectronics, 40V Vdss, 120A continuous drain, 3.7mOhm Rds(on) at 90A. TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP200","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"3.7mOhm @ 90A, 10V","Power Dissipation (Max)":"310W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"210 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"5100 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.3100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/90f4de1cde0f65631cb3857c600282d4.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP200NF04/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP200NF04?","answer":"STMicroelectronics has not published an official successor order code for the STP200NF04. A replacement search must match the 40 V Vdss, 120 A Id, TO-220-3 footprint, and 3.7 mOhm Rds(on) target. Parts like the STP200NF04's peers in the STripFET II family with similar ratings are candidates, but each requires a pin-to-pin and thermal comparison against the existing board design."},{"question":"Can STP200NF04 be used for high current switching?","answer":"Yes. The 120 A continuous drain rating at 25°C case and 3.7 mOhm Rds(on) at 90 A make it suited for high-current switching in motor drives, DC-DC converters, and battery management. The 310 W power dissipation ceiling and 175°C junction temperature provide the thermal headroom, but the heatsink design and gate-drive strength must be sized for the actual load current and switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP200NF04","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP200NF04 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}