{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP200N6F3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP200N6F3","canonicalUrl":"https://icboms.com/stmicroelectronics/STP200N6F3","factsUrl":"https://icboms.com/api/mcp/products/STP200N6F3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET STP200N6F3, N-Channel MOSFET, 60 V Vdss, 120 A Id, 3.9 mOhm Rds(on) at 10 V, TO-220-3, -55°C to 175°C.","salesMarkdown":"## 60 V, 3.9 mOhm — the conduction-loss floor for high-current switching The 120 A continuous drain rating at 25°C case temperature and 330 W maximum power dissipation are achievable only with adequate heatsinking — the TO-220 package's junction-to-case thermal path is the limiting factor, not the silicon. ## Parametric profile for design-in verification A 100 nC gate charge at 100 kHz switching draws 10 mA average from the gate driver, well within the capability of most dedicated MOSFET drivers. The threshold voltage is specified at 4 V maximum with 250 µA drain current, and the recommended drive voltage for minimum on-resistance is 10 V. The ±20 V gate-source maximum leaves headroom for gate-drive overshoot in hard-switching topologies.","metaTitle":"STP200N6F3 N-Channel MOSFET, 60 V, 3.9 mOhm, TO-220","metaDescription":"STripFET N-channel MOSFET, 60 V Vdss, 120 A Id, 3.9 mOhm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP200","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"3.9mOhm @ 60A, 10V","Power Dissipation (Max)":"330W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"100 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"6800 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/924df05400616e8db01e0af52682ff22.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP200N6F3/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP200N6F3?","answer":"No official successor or cross-reference is listed by STMicroelectronics. For a pin-compatible alternative, evaluate other N-channel MOSFETs in the STripFET family with similar 60 V, 120 A, TO-220 ratings — but no direct drop-in replacement is documented."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP200N6F3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP200N6F3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}