{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP200N4F3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP200N4F3","canonicalUrl":"https://icboms.com/stmicroelectronics/STP200N4F3","factsUrl":"https://icboms.com/api/mcp/products/STP200N4F3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ N-Channel MOSFET, STP200N4F3, 40V Vdss, 120A Id, 4.4mOhm Rds(on), TO-220-3, Through Hole, Tube.","salesMarkdown":"## Device identity and key ratings The STP200N4F3: On-resistance is specified at 4.4mOhm maximum with 80A drain current and 10V gate drive — the 10V drive voltage matches the rated Rds(on) condition. Total gate charge is 75 nC at 10V, input capacitance 5100 pF at 25V drain bias. ## Package and thermal profile Housed in a TO-220-3 through-hole package with the standard TO-220 supplier device footprint. The large copper tab provides a low thermal resistance path to the heatsink — maximum power dissipation is 300W at case temperature. The wide temperature margin means derating above 25°C follows the normal Rds(on) temperature coefficient curve. ## Lifecycle reality — obsolete, sourced to order STMicroelectronics has marked the STP200N4F3 as obsolete. Available through independent distribution channels on a quoted-to-order basis. The date-code and lot traceability are confirmed at RFQ; the TO-220 body and laser-etched marking are straightforward to authenticate against ST's known marking standards.","metaTitle":"STMicroelectronics STP200N4F3 N-Channel MOSFET, 40V, 120A","metaDescription":"Obsolete STP200N4F3 N-channel MOSFET from STMicroelectronics. 40V Vdss, 120A continuous drain, 4.4mOhm Rds(on) at 10V. TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP200","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"4.4mOhm @ 80A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"75 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"5100 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/1226b9a6872e93bd49b7026694b3d962.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP200N4F3/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy STP200N4F3 and get a price?","answer":"Sourced through independent distribution against an RFQ. Availability, current pricing, and lot traceability are confirmed at quote time — the TO-220 package and laser marking are straightforward to verify against ST's factory standard."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP200N4F3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP200N4F3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-21T04:59:01.163Z","lastPublished":"2026-07-21T04:59:01.163Z","indexable":true}}