{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP19NM50N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP19NM50N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP19NM50N","factsUrl":"https://icboms.com/api/mcp/products/STP19NM50N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP19NM50N, MDmesh™ II series, N-channel MOSFET, 500V Vdss, 14A Id, 250mOhm Rds(on), TO-220-3, Tube.","salesMarkdown":"## 500 V N-channel MOSFET in TO-220 — the switching load envelope The STP19NM50N is a 500 V drain-source, 14 A continuous-drain N-channel MOSFET from ST's MDmesh™ II series, packaged in a through-hole TO-220-3. These numbers set the gate-driver current requirement: a driver sourcing 1 A can charge the gate in about 34 ns, though the practical switching speed is also limited by the gate-drive loop inductance and the external gate resistor. ## Active lifecycle — still a current-production MOSFET The part is ROHS3 compliant, meeting EU Directive 2011/65/EU and its amendments for lead-free soldering processes. The base product number is STP19, which covers the TO-220 variant in the MDmesh™ II family. ## Parametric fit — what the ratings mean for the BOM line The 500 V Vdss and 14 A continuous current cover a wide range of offline power-converter topologies — flyback, forward, half-bridge — where the MOSFET sees the rectified mains plus reflected voltage. Maximum junction temperature is 150 °C. The 110 W power dissipation at the case (Tc) assumes an infinite heatsink; in practice the TO-220 package's junction-to-case thermal resistance (not listed here) drives the derating, so the actual continuous power is limited by the heatsink's thermal impedance and the ambient temperature. Gate threshold voltage (Vgs(th)) is a maximum of 4 V at 250 µA drain current. This is the point where the device just begins to conduct — for a 10 V drive, the gate overdrive is 6 V, which keeps the Rds(on) in the specified range. The ±25 V maximum gate-source rating gives margin for ringing on the gate node in a hard-switching converter.","metaTitle":"STMicroelectronics STP19NM50N MOSFET","metaDescription":"STP19NM50N N-channel 500V 14A MOSFET in TO-220, 250mOhm Rds(on), 34nC Qg. Active production, ROHS3. Sourced to order.","metaKeywords":null},"attributes":{"series":"MDmesh™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP19","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"250mOhm @ 7A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1000 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"14A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.9800","priceTiers":[{"qty":1,"price":"$3.98000","currency":"USD"},{"qty":10,"price":"$3.34500","currency":"USD"},{"qty":100,"price":"$2.70570","currency":"USD"},{"qty":500,"price":"$2.40510","currency":"USD"},{"qty":1000,"price":"$2.05936","currency":"USD"},{"qty":2000,"price":"$1.93911","currency":"USD"},{"qty":5000,"price":"$1.86038","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/db1fe8a12e805a7cc62d5174f2d80412.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP19NM50N/alternatives.json"},"ai":{"faq":[{"question":"What is the closest second-source for the STP19NM50N?","answer":"The closest functional peers from ST's own portfolio are the STP18N65M2 (650 V, 12 A, 330 mOhm), the STP18N60DM2 (600 V, 12 A, 295 mOhm), and the STP15N65M5 (650 V, 11 A, 340 mOhm). All are N-channel TO-220 MOSFETs with ±25 V gate drive and 150 °C junction rating. The STP18N65M2 is the nearest match in Rds(on) and gate charge (20 nC vs 34 nC), but the drain current and voltage ratings differ — verify the BOM's voltage margin before substituting."},{"question":"What compliance documentation does STMicroelectronics provide for the STP19NM50N?","answer":"The STP19NM50N is ROHS3 Compliant. The manufacturer provides a datasheet with electrical characteristics, a material declaration, and a PCN notification channel for any changes to the product or process."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP19NM50N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP19NM50N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}