{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP18N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP18N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP18N65M2","factsUrl":"https://icboms.com/api/mcp/products/STP18N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP18N65M2, MDmesh™ M2 series, N-Channel MOSFET, 650 V Vdss, 12 A Id, 330 mOhm Rds(on) at 6 A, 10 V, 20 nC Qg, TO-220-3, Through Hole, 150 °C Tj.","salesMarkdown":"The STP18N65M2 is an STMicroelectronics N-channel power MOSFET from the MDmesh™ M2 series, built on a planar technology that balances on-resistance and switching losses for 650 V-class offline converters. At 6 A and 10 V, Rds(on) is 330 mOhm. ## Through-hole mounting and thermal path The TO-220-3 through-hole package mounts into a hole pattern on the PCB. The metal tab is the drain terminal and the primary thermal path. The part is ROHS3 compliant.","metaTitle":"STP18N65M2 MOSFET N-Ch 650V 12A TO-220, MDmesh M2","metaDescription":"STP18N65M2 N-channel 650V 12A MOSFET in TO-220. Rds(on) 330mOhm at 6A, 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ M2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP18","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"330mOhm @ 6A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"770 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"12A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.7900","priceTiers":[{"qty":1,"price":"$2.79000","currency":"USD"},{"qty":10,"price":"$2.31600","currency":"USD"},{"qty":100,"price":"$1.84360","currency":"USD"},{"qty":500,"price":"$1.56002","currency":"USD"},{"qty":1000,"price":"$1.32365","currency":"USD"},{"qty":2000,"price":"$1.25747","currency":"USD"},{"qty":5000,"price":"$1.21019","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c4a5ea609b54e2ae945ef0b0d5b228a1.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP18N65M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP18N65M2?","answer":"This is the on-resistance at 25 °C junction temperature; expect it to increase by roughly 50–60 % at 125 °C junction, per the normalised curve typical for planar MOSFETs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP18N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP18N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}