{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP18N60M6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP18N60M6","canonicalUrl":"https://icboms.com/stmicroelectronics/STP18N60M6","factsUrl":"https://icboms.com/api/mcp/products/STP18N60M6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M6 series, STP18N60M6, N-Channel MOSFET, 600 V drain-source, 13 A continuous drain, 280 mOhm Rds(on) at 10 V, 16.8 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V N-channel MOSFET for high-efficiency switched-mode power supplies The MDmesh M6 process delivers a low typical on-resistance figure of merit — the 280 mOhm max at 10 V gate drive combined with a gate charge of 16.8 nC at 10 V reduces both conduction and switching losses, which is where the efficiency gain shows up in a 100–300 W power stage. ## 280 mOhm on-resistance — what it means for conduction loss The max Rds(on) of 280 mOhm at 6.5 A, 10 V is the number to use for worst-case conduction loss calculations. At 6.5 A drain current, that resistance dissipates about 12 W — well within the 110 W power dissipation limit at 25°C case, but the junction temperature derating needs to be factored in for your actual operating current and ambient. The MDmesh M6 process gives a positive temperature coefficient on Rds(on), so paralleling devices shares current naturally, but the thermal design still needs to keep Tj below 150°C. That keeps the gate drive power low — at 100 kHz switching, the gate drive loss is roughly 17 mW. The low input capacitance of 650 pF at 100 V drain-source also helps the driver slew the gate voltage quickly, minimizing cross-conduction during hard-switched transitions. The TO-220-3 through-hole package with the tab as the drain connection is the workhorse for medium-power through-hole designs. The 110 W maximum power dissipation assumes the tab is soldered to a heatsink with adequate thermal interface. For a 13 A continuous drain current, the junction-to-case thermal resistance will be the limiting factor — the package itself handles the current, but the heatsink area and airflow determine whether the junction stays below 150°C at full load. ## Sourcing and supply position For BOM stability in a new design, this is a low supply-risk choice — no imminent obsolescence to watch.","metaTitle":"STP18N60M6 N-Channel MOSFET, 600V, 13A, TO-220","metaDescription":"STP18N60M6 N-channel MOSFET from STMicroelectronics MDmesh M6 series. 600V Vdss, 13A Id, 280mOhm Rds(on) at 10V. TO-220 package. -55°C to 150°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STP18","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 6.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"16.8 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"650 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"13A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2112","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP18N60M6/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP18N60M6 at 10V?","answer":"The maximum Rds(on) is 280 mOhm at a drain current of 6.5 A and a gate-source voltage of 10 V."},{"question":"What is the Vgs(th) of STP18N60M6?","answer":"The maximum gate threshold voltage is 4.75 V at a drain current of 250 µA."},{"question":"What is the closest pin-compatible alternative to STP18N60M6?","answer":"The STP18N60M6 is part of the MDmesh M6 series. For a direct pin-compatible replacement within the same family, the base product number STP18 covers multiple voltage and Rds(on) variants — verify the specific ratings against your design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP18N60M6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP18N60M6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}