{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP18N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP18N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP18N60M2","factsUrl":"https://icboms.com/api/mcp/products/STP18N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP18N60M2, N-Channel MOSFET, MDmesh™ II Plus series, 600 V Vdss, 13 A Id, 280 mOhm Rds(on), 21.5 nC Qg, TO-220-3, -55°C to 150°C.","salesMarkdown":"Gate charge is 21.5 nC at 10 V — light enough that a standard gate driver IC can switch it at tens of kilohertz without excessive drive current. ## Junction temperature range and where the part sits The TO-220-3 through-hole package is field-serviceable — a standard iron and solder wick swap it on site, no hot-air station needed.","metaTitle":"STP18N60M2 N-Channel MOSFET, 600 V, 13 A, TO-220","metaDescription":"STP18N60M2 N-channel 600 V 13 A MOSFET in TO-220. 280 mOhm Rds(on), 21.5 nC gate charge. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP18","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 6.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"21.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"791 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"13A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.1800","priceTiers":[{"qty":1,"price":"$2.18000","currency":"USD"},{"qty":50,"price":"$1.75240","currency":"USD"},{"qty":100,"price":"$1.44190","currency":"USD"},{"qty":500,"price":"$1.22004","currency":"USD"},{"qty":1000,"price":"$1.03519","currency":"USD"},{"qty":2000,"price":"$0.98343","currency":"USD"},{"qty":5000,"price":"$0.94646","currency":"USD"},{"qty":10000,"price":"$0.91513","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8e61710f5b542d634d1c411b74da5fbd.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP18N60M2/alternatives.json"},"ai":{"faq":[{"question":"Is STP18N60M2 RoHS compliant?","answer":"Yes, the STP18N60M2 is ROHS3 compliant — lead-free and meets the latest EU restriction directive."},{"question":"What is the gate charge and why does it matter?","answer":"The total gate charge is 21.5 nC at 10 V. This is low enough that a standard gate driver IC can switch the MOSFET at tens of kilohertz without needing a high-current driver stage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP18N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP18N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}