{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP180NS04ZC","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP180NS04ZC","canonicalUrl":"https://icboms.com/stmicroelectronics/STP180NS04ZC","factsUrl":"https://icboms.com/api/mcp/products/STP180NS04ZC","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SAFeFET™ series, N-Channel MOSFET, STP180NS04ZC, 33V Vdss, 120A continuous drain at 25°C, 4.2mOhm Rds(on) at 10V, TO-220-3 through-hole, -55°C to 175°C junction temperature.","salesMarkdown":"## Obsolete — sourcing for last-time-buy and replacement At 40 A the on-state dissipation is roughly 6.7 W, which the 330 W package rating can handle with proper heatsinking. ## 120 A continuous drain — thermal derating reality The 120 A continuous drain current is specified at a case temperature of 25°C. In a real enclosure at 85°C ambient, derating is significant — the junction-to-case thermal path and the 330 W dissipation ceiling limit usable current. ## TO-220-3 package — mounting and thermal interface The through-hole TO-220-3 package allows direct mounting to a heatsink with a single screw. The exposed metal tab is the drain, so an insulating pad or thermal compound is needed if the heatsink is at chassis ground.","metaTitle":"STP180NS04ZC N-Channel MOSFET, 33V, 120A, 4.2mOhm, Obsolete","metaDescription":"STP180NS04ZC N-Channel SAFeFET™ MOSFET, 33V Vdss, 120A continuous drain, 4.2mOhm Rds(on) at 10V. Confirm fit and RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SAFeFET™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1mA","Base Product Number":"STP180","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4.2mOhm @ 40A, 10V","Power Dissipation (Max)":"330W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"110 nC @ 10 V","Drain to Source Voltage (Vdss)":"33 V","Input Capacitance (Ciss) (Max) @ Vds":"4560 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.8800","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP180NS04ZC/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP180NS04ZC?","answer":"The maximum Rds(on) is 4.2 mOhm at a drain current of 40 A and a gate-to-source voltage of 10 V. This rating determines conduction losses in the on-state."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP180NS04ZC","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP180NS04ZC when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}