{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP180N55F3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP180N55F3","canonicalUrl":"https://icboms.com/stmicroelectronics/STP180N55F3","factsUrl":"https://icboms.com/api/mcp/products/STP180N55F3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ Series, N-Channel MOSFET, TO-220-3 Through Hole, 55 V Drain-Source, 120 A Continuous Drain, 3.8 mOhm Rds On, -55°C to 175°C Junction.","salesMarkdown":"The STP180N55F3: The gate threshold voltage is 4 V max at 250 µA drain current, and the recommended drive voltage for minimum Rds(on) is 10 V. Gate charge is 100 nC at 10 V, and input capacitance is 6800 pF at 25 V drain-source bias. ## Thermal and package considerations The through-hole mount is straightforward for prototyping and rework, though the package limits board density compared to surface-mount alternatives. ## Lifecycle status and sourcing","metaTitle":"STP180N55F3 N-Channel MOSFET, 55V, 120A, 3.8mOhm","metaDescription":"STP180N55F3 N-Channel MOSFET from STMicroelectronics STripFET series. 55V Vdss, 120A Id, 3.8mOhm Rds(on).","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP180","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"3.8mOhm @ 60A, 10V","Power Dissipation (Max)":"330W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"100 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"6800 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/211552bf9bc2cfa22439416918cb171b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP180N55F3/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP180N55F3?","answer":"A pin-compatible replacement within the STripFET family would need to be evaluated against the original design's voltage, current, and Rds(on) requirements."},{"question":"What is the Rds(on) of STP180N55F3?","answer":"The maximum Rds(on) is 3.8 mOhm at 60 A drain current with 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP180N55F3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP180N55F3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}