{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP17N62K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP17N62K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STP17N62K3","factsUrl":"https://icboms.com/api/mcp/products/STP17N62K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH3™ series, STP17N62K3, N-Channel MOSFET, 620 V Vdss, 15.5 A Id, 380 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.","salesMarkdown":"## Obsolete — sourcing reality and the replacement search STMicroelectronics lists the STP17N62K3 as obsolete. For new designs, a current-production SuperMESH3 or MDmesh MOSFET with similar ratings avoids the obsolescence risk entirely. ## Thermal and drive considerations in a TO-220 The TO-220-3 through-hole package is a standard power package with a metal tab that carries the drain. The 190 W power dissipation rating assumes the case is held at 25°C — in practice, a heatsink with a thermal resistance of 1–2 °C/W is needed to keep the junction below 150°C at full load. The gate threshold voltage is 4.5 V maximum at 100 µA, but the Rds(on) is specified at 10 V gate drive; a 12 V gate supply is the safe choice for minimum on-resistance.","metaTitle":"STP17N62K3 N-Channel MOSFET, 620V 15.5A, TO-220","metaDescription":"STP17N62K3 N-Channel MOSFET from STMicroelectronics SuperMESH3 series, 620V Vdss, 15.5A Id, 380mOhm Rds(on). Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 100µA","Base Product Number":"STP17N","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 7.5A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"94 nC @ 10 V","Drain to Source Voltage (Vdss)":"620 V","Input Capacitance (Ciss) (Max) @ Vds":"2500 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"15.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.4800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7a09bfa2b09fd6dce7625aed03c5ed81.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP17N62K3/alternatives.json"},"ai":{"faq":[{"question":"Is STP17N62K3 obsolete?","answer":"Yes, STMicroelectronics lists the STP17N62K3 as obsolete."},{"question":"What is the Rds(on) of STP17N62K3?","answer":"The maximum on-resistance is 380 mOhm at a drain current of 7.5 A and a gate-source voltage of 10 V. This figure determines conduction loss in the power stage and is the key parameter for thermal design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP17N62K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP17N62K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}