{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP16NS25","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP16NS25","canonicalUrl":"https://icboms.com/stmicroelectronics/STP16NS25","factsUrl":"https://icboms.com/api/mcp/products/STP16NS25","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP16NS25 N-Channel MOSFET, MESH OVERLAY™ series, 250 V drain-source voltage, 16 A continuous drain, 280 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.","salesMarkdown":"Gate charge is 83 nC at 10 V, so the driver needs to source and sink that charge for each switching cycle — budget gate drive current accordingly for the target frequency. ## TO-220 — field-swappable with a heatsink The TO-220-3 through-hole package is a standard for power devices. It mounts into a PCB or onto a heatsink with a single screw. The tab is the drain, so insulating hardware is needed if the heatsink is grounded. Maximum power dissipation is 140 W at case temperature — that figure assumes an infinite heatsink, so real-world dissipation depends on the thermal interface and airflow. ## Temperature range and handling The gate-source voltage is limited to ±20 V absolute maximum.","metaTitle":"STP16NS25 N-Channel MOSFET, 250 V, 16 A, TO-220, Obsolete","metaDescription":"STP16NS25 N-Channel MOSFET from STMicroelectronics, 250 Vdss, 16 A continuous drain, 280 mOhm Rds(on), TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MESH OVERLAY™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP16N","Operating Temperature":"-65°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 8A, 10V","Power Dissipation (Max)":"140W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"83 nC @ 10 V","Drain to Source Voltage (Vdss)":"250 V","Input Capacitance (Ciss) (Max) @ Vds":"1270 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"16A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/1f83e76e9430e1b5f0f6c12e1f9c03bd.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP16NS25/alternatives.json"},"ai":{"faq":[{"question":"Is STP16NS25 equivalent to IRF840?","answer":"The IRF840 is also a 500 V N-channel MOSFET in a TO-220 package, but the STP16NS25 is a 250 V device. They are not direct equivalents due to the different voltage ratings — the STP16NS25 has a lower Vdss (250 V vs 500 V) and higher current rating (16 A vs 8 A typical for IRF840)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP16NS25","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP16NS25 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}