{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP16NF06","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP16NF06","canonicalUrl":"https://icboms.com/stmicroelectronics/STP16NF06","factsUrl":"https://icboms.com/api/mcp/products/STP16NF06","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ II series, N-Channel MOSFET, 60 V Drain-Source Voltage, 16 A Continuous Drain Current at 25°C, 100 mOhm On-Resistance at 10V, TO-220-3 Through-Hole Package, -55°C to 175°C Junction Temperature.","salesMarkdown":"## Gate charge and drive — what 13 nC means for your gate-drive circuit The STP16NF06 specifies a maximum gate charge of 13 nC at 10 V gate voltage. At higher frequencies the 13 nC figure still keeps gate-drive losses modest — a 100 kHz switching rate draws roughly 1.3 mA average from the gate supply, which a standard PWM output from a microcontroller or a simple totem-pole buffer can handle. The input capacitance is 315 pF at 25 V drain-source, consistent with a device designed for moderate-speed switching rather than megahertz-class converters. ## On-resistance and thermal design — sizing the heatsink With a maximum power dissipation of 45 W at case temperature, the device can handle that loss comfortably with a modest heatsink — a TO-220 bolted to a 2–3 °C/W heatsink keeps the junction well below 175°C in still air. If the gate drive voltage drops below 10 V, the on-resistance roughly doubles at 4.5 V, so the design should budget for higher conduction loss when driving from a 5 V logic rail without a gate-drive boost circuit. For dual-sourcing or supply-chain resilience, the STP16NF06 sits in a well-populated 60 V N-channel TO-220 family; a cross-reference search against the base product number STP16 will surface pin-compatible siblings with similar or higher current ratings.","metaTitle":"STP16NF06 N-Channel MOSFET, 60V 16A TO-220, STripFET II","metaDescription":"STP16NF06 N-channel MOSFET from STMicroelectronics STripFET II series: 60V Vdss, 16A continuous drain, 100mOhm Rds(on) at 10V, TO-220 package, -55°C to 175°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP16","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"100mOhm @ 8A, 10V","Power Dissipation (Max)":"45W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"13 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"315 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"16A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.3700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/36d83487727bdeeca3e68ab15ddb1783.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP16NF06/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP16NF06","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP16NF06 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}