{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP16N50M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP16N50M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP16N50M2","factsUrl":"https://icboms.com/api/mcp/products/STP16N50M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP16N50M2, N-channel MOSFET, MDmesh M2 series, 500 V Vdss, 13 A Id, 280 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.","salesMarkdown":"The STP16N50M2: Total gate charge is 19.5 nC at Vgs = 10 V, a figure that keeps gate-drive losses low in high-frequency topologies like active-clamp flyback or LLC resonant converters. Input capacitance Ciss is 710 pF at Vds = 100 V, which together with the low Qg reflects the MDmesh M2 vertical structure that reduces the Miller plateau. ## Package and thermal path — TO-220-3 Housed in a TO-220-3 through-hole package, the STP16N50M2 is designed for mounting to a heatsink via the metal tab, with a maximum power dissipation of 110 W at case temperature Tc. STMicroelectronics lists the STP16N50M2 as obsolete.","metaTitle":"STP16N50M2 N-Channel MOSFET, 500 V, 13 A, TO-220-3","metaDescription":"STP16N50M2 N-channel MOSFET from STMicroelectronics, MDmesh M2 series, 500 V Vdss, 13 A Id, 280 mOhm Rds(on), TO-220-3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP16N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 6.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"19.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"710 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"13A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/5cd7623c52290c4d45e2dafe2fa41dda.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP16N50M2/alternatives.json"},"ai":{"faq":[{"question":"What is a direct replacement for STP16N50M2?","answer":"No official direct replacement is recorded in the lifecycle data. For a pin-compatible substitute, look for an N-channel MOSFET in TO-220-3 with a 500 V Vdss rating, 13 A or higher continuous drain current, and an Rds(on) at or below 280 mOhm at 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP16N50M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP16N50M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}