{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP160N4LF6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP160N4LF6","canonicalUrl":"https://icboms.com/stmicroelectronics/STP160N4LF6","factsUrl":"https://icboms.com/api/mcp/products/STP160N4LF6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP160N4LF6, DeepGATE™ STripFET™ VI, N-Channel MOSFET, 40V Vdss, 120A Id, 2.9mOhm Rds(on) at 10V, TO-220-3, Through Hole, -55°C to 175°C.","salesMarkdown":"## 40 V, 120 A N-Channel Power MOSFET in TO-220 The 40 V Vdss rating places this part in the low-voltage MOSFET class, suitable for 12 V or 24 V bus systems where margin against transients is needed. The 120 A continuous current rating is at a case temperature of 25°C; real-world derating applies as the junction warms up, and the 150 W power dissipation ceiling (at Tc=25°C) sets the thermal budget for the heatsink. Gate drive voltage is specified at 5 V and 10 V for achieving the minimum and maximum Rds(on). With a gate charge of 181 nC at 10 V, the driver must supply enough peak current for fast switching without excessive switching losses. The TO-220 package with through-hole mounting suits designs where heatsinking through the tab is straightforward. ## Lifecycle status and sourcing Sourcing is limited to the independent distribution market, where remaining inventory or surplus stock can be located.","metaTitle":"STP160N4LF6 STMicro N-Channel MOSFET, 40V, 120A, TO-220","metaDescription":"STP160N4LF6 N-Channel MOSFET, 40V Vdss, 120A Id, 2.9mOhm Rds(on) at 10V. TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"DeepGATE™, STripFET™ VI","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 250µA (Min)","Base Product Number":"STP160","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"2.9mOhm @ 60A, 10V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"181 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"8130 pF @ 20 V","Drive Voltage (Max Rds On, Min Rds On)":"5V, 10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/659fa40c9f33a23268183c3f4bc61333.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP160N4LF6/alternatives.json"},"ai":{"faq":[{"question":"What is a direct replacement for STP160N4LF6?","answer":"No official direct replacement or cross-reference part number is listed by STMicroelectronics for STP160N4LF6. A functionally similar N-channel MOSFET with 40 V Vdss, 120 A Id, and TO-220 package would need to be evaluated for Rds(on), gate charge, and thermal performance to confirm fit."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP160N4LF6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP160N4LF6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}