{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP15NM65N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP15NM65N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP15NM65N","factsUrl":"https://icboms.com/api/mcp/products/STP15NM65N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II series, N-Channel MOSFET, 650 V drain-source, 12 A continuous drain, 380 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 380 mOhm Rds(on) and 33.3 nC gate charge — switching loss anchor The 380 mOhm maximum on-resistance, specified at 6 A and 10 V gate voltage, sets the conduction loss baseline for a 12 A design. Paired with a typical gate charge of 33.3 nC at 10 V, the STP15NM65N suits hard-switched topologies such as flyback and PFC stages where the switching frequency stays moderate — the gate-drive energy per cycle is low enough to keep the driver stage simple.","metaTitle":"STP15NM65N N-Channel MOSFET, 650 V, 12 A, TO-220","metaDescription":"STMicroelectronics STP15NM65N N-channel MOSFET, 650 V Vdss, 12 A Id, 380 mOhm Rds(on). MDmesh™ II series. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP15N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 6A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"33.3 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"983 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"12A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/92ea42515adadc20aa49d4653261f61c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP15NM65N/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STP15NM65N?","answer":"A functionally similar N-channel MOSFET in the same voltage and current class — 650 V, 12 A range — should be evaluated for pin-compatibility and gate-drive requirements. The TO-220 footprint is common, but parametric differences in Rds(on), gate charge, and switching speed must be verified against the application."},{"question":"What is the Rds(on) of STP15NM65N?","answer":"The maximum Rds(on) is 380 mOhm at a drain current of 6 A with a 10 V gate-to-source voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP15NM65N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP15NM65N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}