{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP15NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP15NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP15NM60N","factsUrl":"https://icboms.com/api/mcp/products/STP15NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II, STP15NM60N, N-Channel MOSFET, 600 V drain-source, 14 A continuous drain, 299 mOhm Rds(on) at 10 V, 37 nC gate charge, TO-220-3 through-hole, -55°C to 150°C junction.","salesMarkdown":"## 299 mOhm on-resistance and gate charge The maximum on-resistance (Rds(on)) is 299 mOhm at a drain current of 7 A and a gate drive of 10 V, which is the specified drive voltage for achieving the lowest Rds(on). The total gate charge (Qg) is 37 nC at 10 V, and the input capacitance (Ciss) is 1250 pF at 50 V drain-source — these numbers tell you the switching speed and driver requirements: a 37 nC gate charge means a modest gate driver can switch it fast without excessive power loss, but the 1250 pF input capacitance still needs a clean gate-drive layout to avoid ringing in a hard-switching converter. No official replacement order code is listed by STMicroelectronics, so cross-referencing by parametric match (600 V, 14 A, 299 mOhm, TO-220) is the practical path for a drop-in substitute.","metaTitle":"STP15NM60N N-Channel MOSFET, 600 V, 14 A, MDmesh II, TO-220","metaDescription":"STP15NM60N N-channel MOSFET from STMicroelectronics, 600 V drain-source, 14 A continuous drain, 299 mOhm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP15N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"299mOhm @ 7A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"37 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1250 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"14A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.3200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/45864b4c74e1c7db0c31cb8835fe011b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP15NM60N/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP15NM60N?","answer":"The maximum Rds(on) is 299 mOhm at a drain current of 7 A and a gate-source voltage of 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP15NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP15NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}