{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP14NM65N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP14NM65N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP14NM65N","factsUrl":"https://icboms.com/api/mcp/products/STP14NM65N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP14NM65N, MDmesh™ II N-channel MOSFET, 650 V drain-source voltage, 12 A continuous drain, 380 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.","salesMarkdown":"## 650 V N-channel MOSFET for high-voltage switching The device comes in a TO-220 through-hole package, suitable for board-level mounting with a heatsink. Typical applications include offline power supplies, PFC stages, flyback converters, and other high-voltage switched-mode circuits. New designs should not use this part. ## Key ratings for the BOM decision The 650 V drain-source rating sets the voltage class for offline power supplies up to about 400 V DC bus. Total gate charge of 45 nC at 10 V gives a reasonable switching speed for a 650 V device — the gate driver should be sized to deliver that charge within the desired switching interval. Input capacitance of 1300 pF at 50 V Vds is moderate, so the switching node rise time will be manageable with a standard gate resistor. Maximum junction temperature is 150 °C, and power dissipation is 125 W at the case — a heatsink is mandatory for any continuous load above a few amps.","metaTitle":"STP14NM65N N-Channel MOSFET, 650 V, 12 A, MDmesh II, TO-220","metaDescription":"STP14NM65N N-channel MOSFET, 650 V Vdss, 12 A continuous drain, 380 mOhm Rds(on) at 10 V. MDmesh II series, TO-220 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP14N","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 6A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1300 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"12A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/1ab152392510b6fc7aa610af795eb8ef.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP14NM65N/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP14NM65N?","answer":"The maximum Rds(on) is 380 mOhm at 6 A drain current and 10 V gate drive."},{"question":"What is the replacement for STP14NM65N?","answer":"A pin-compatible alternative within the MDmesh II family may exist, but electrical verification against the original design is required."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP14NM65N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP14NM65N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}