{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP140N6F7","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP140N6F7","canonicalUrl":"https://icboms.com/stmicroelectronics/STP140N6F7","factsUrl":"https://icboms.com/api/mcp/products/STP140N6F7","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ STP140N6F7, N-Channel MOSFET, 60 V Vdss, 80 A Id, 3.5 mOhm Rds(on) @ 40 A, 10 V, 55 nC Qg, TO-220-3, Through Hole, 175 °C TJ.","salesMarkdown":"## Conduction and switching parametrics With a total gate charge of 55 nC at 10 V and an input capacitance of 3100 pF at 10 V drain-source, the STP140N6F7 presents a moderate gate-drive load — suitable for standard gate-driver ICs in hard-switched topologies up to several tens of kilohertz. Maximum power dissipation is 158 W at the case temperature, and the junction temperature rating of 175 °C allows operation in thermally demanding environments such as motor drives and power supplies. ## Package and mounting for the BOM The through-hole mounting suits wave-solder assembly and field replacement in industrial equipment.","metaTitle":"STP140N6F7 MOSFET, N-Channel 60 V 80 A TO-220, 3.5 mOhm","metaDescription":"STP140N6F7 N-channel MOSFET, 60 V Vdss, 80 A Id, 3.5 mOhm Rds(on) at 40 A. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"STripFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP140","Operating Temperature":"175°C(TJ)","Rds On (Max) @ Id, Vgs":"3.5mOhm @ 40A, 10V","Power Dissipation (Max)":"158W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"55 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"3100 pF @ 10 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.4100","priceTiers":[{"qty":1,"price":"$2.53000","currency":"USD"},{"qty":10,"price":"$2.27100","currency":"USD"},{"qty":100,"price":"$1.82540","currency":"USD"},{"qty":500,"price":"$1.49976","currency":"USD"},{"qty":1000,"price":"$1.41488","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/5bad965ce7d07d5bb4d02c6c725a87ba.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP140N6F7/alternatives.json"},"ai":{"faq":[{"question":"Can STP140N6F7 replace IRFZ44N?","answer":"Both are 60 V N-channel MOSFETs in TO-220 packages, but the STP140N6F7 offers a lower 3.5 mOhm Rds(on) versus the IRFZ44N's typical 17.5 mOhm, and a higher 80 A continuous drain rating. Pin-compatibility should be verified against the specific gate-drive voltage and switching frequency of your circuit."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP140N6F7","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP140N6F7 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}