{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP13NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP13NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STP13NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STP13NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II STP13NM60ND, N-Channel MOSFET, 600 V Vdss, 11 A continuous drain, 380 mΩ Rds(on) at 10 V, TO-220-3 through-hole, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V switching MOSFET for PFC and flyback converters The TO-220-3 through-hole package makes it a field-swappable part — no lab bench needed, just a screwdriver and a bit of thermal paste. The 600 V Vdss rating gives you a solid margin for universal-input offline flyback converters (85–265 VAC rectified to ~375 VDC) and single-phase PFC stages. The 380 mΩ Rds(on) at 10 V gate drive is the number to use for conduction loss calculations at full load — at 5.5 A that is about 11.5 W, so the 109 W power dissipation rating and the TO-220 tab need a heatsink sized for your ambient. Gate charge of 24.5 nC at 10 V keeps switching losses manageable for a 100–200 kHz hard-switched converter; the driver stage should source at least 1 A peak to keep the Miller plateau short. ## Temperature range and field fit The wide range also means it survives cold starts in unheated equipment sheds.","metaTitle":"STP13NM60ND N-Channel MOSFET, 600 V, 11 A, TO-220-3","metaDescription":"STP13NM60ND N-Channel MOSFET from STMicroelectronics FDmesh™ II series. 600 V Vdss, 11 A continuous drain, 380 mΩ Rds(on) at 10 V. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP13","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 5.5A, 10V","Power Dissipation (Max)":"109W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"24.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"845 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.8300","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/02ceeeea4176da97276d7e65e9283c0e.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to STP13NM60ND?","answer":"The STP13NM60N is the same-function N-channel MOSFET from the same FDmesh™ II family in the same TO-220 package, but the 'D' suffix on the STP13NM60ND indicates a different internal design — verify the gate charge and Rds(on) match your switching frequency before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP13NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP13NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}