{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP13N60DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP13N60DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP13N60DM2","factsUrl":"https://icboms.com/api/mcp/products/STP13N60DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, TO-220-3 Through Hole, 600 V Vdss, 11 A continuous drain at 25°C, 365 mOhm Rds(on) at 10 V, 19 nC gate charge.","salesMarkdown":"## Switching losses and gate drive budget The STP13N60DM2: Total gate charge is 19 nC at 10 V. Input capacitance is 730 pF at 100 V drain bias. ## Thermal and operating limits Maximum power dissipation is 110 W at case temperature, but the real-world limit is set by the heatsink and ambient conditions.","metaTitle":"STP13N60DM2 N-Channel MOSFET, 600 V, 11 A, TO-220-3","metaDescription":"STMicroelectronics STP13N60DM2 N-channel MOSFET, 600 V Vdss, 11 A continuous drain, 365 mOhm Rds(on) at 10 V. Active production, TO-220-3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP13","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"365mOhm @ 5.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"19 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"730 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.8225","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP13N60DM2/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to STP13N60DM2?","answer":"The STP13N60M2 is a related MDmesh M2 series part from STMicroelectronics in the same TO-220 package. The DM2 variant uses a later-generation trench-gate process that typically yields lower on-resistance per die area. Check the specific Rds(on) and gate charge figures for the M2 variant against your switching-loss budget before substituting."},{"question":"What is the typical Rds(on) of STP13N60DM2 at 25°C?","answer":"The datasheet specifies a maximum Rds(on) of 365 mOhm at 5.5 A drain current and 10 V gate drive. Typical values are lower, but the maximum figure is the one to use for worst-case conduction loss calculations in your thermal design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP13N60DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP13N60DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}