{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP12NM60N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP12NM60N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP12NM60N","factsUrl":"https://icboms.com/api/mcp/products/STP12NM60N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP12NM60N, MDmesh™ II N-Channel MOSFET, 600V Vdss, 10A Id, 410mOhm Rds(on) @ 5A 10V, 30.5nC Qg, TO-220-3 through-hole, -55°C to 150°C junction.","salesMarkdown":"## 600 V / 10 A — the power-stage fit Its 600 V drain-to-source breakdown voltage and 10 A continuous drain current rating make it suitable for offline power supplies, AC-DC converters, and motor drive circuits where the bus voltage can reach several hundred volts. ## Switching losses — gate charge and capacitance budget With a typical gate charge of 30.5 nC at 10 V and input capacitance of 960 pF at 50 V drain bias, this MOSFET demands a moderate gate drive. The 30.5 nC charge means a 1 A gate driver can switch it in about 30 ns, keeping crossover losses manageable in the 50-100 kHz range. ## TO-220 — the through-hole workhorse The metal tab provides a low thermal resistance path to a heatsink — essential for dissipating the 90 W maximum. The through-hole leads are easy to hand-solder or rework, but the package is larger than surface-mount alternatives like D2PAK, so board space is a consideration. There is no direct pin-compatible replacement listed in the official documentation, so a redesign with a current-generation MDmesh™ or similar 600 V MOSFET may be the practical path for new designs.","metaTitle":"STP12NM60N N-Channel MOSFET, 600V 10A, TO-220","metaDescription":"STP12NM60N N-Channel MOSFET from STMicroelectronics MDmesh™ II series. 600V Vdss, 10A Id, 410mOhm Rds(on).","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP12","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"410mOhm @ 5A, 10V","Power Dissipation (Max)":"90W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"30.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"960 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7e9d034292706ab421674bbdbf50ceee.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP12NM60N/alternatives.json"},"ai":{"faq":[{"question":"What is the direct replacement for STP12NM60N?","answer":"STMicroelectronics has not published an official direct replacement for the STP12NM60N. For new designs, consider a current-generation 600 V N-channel MOSFET from the MDmesh™ series or another manufacturer — the replacement will need to match the 600 V Vdss, 10 A Id, and TO-220 package. A parametric search against these ratings will yield viable alternatives."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP12NM60N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP12NM60N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}