{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP12N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP12N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STP12N60M2","factsUrl":"https://icboms.com/api/mcp/products/STP12N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, 600 V drain-source, 9 A continuous drain, 450 mOhm Rds(on) at 10 V gate drive, 16 nC gate charge, TO-220-3 through-hole package.","salesMarkdown":"The STP12N60M2: Rated at 600 V drain-to-source with a continuous drain current of 9 A at 25 °C case temperature, this part fits offline flyback converters, PFC stages, and auxiliary power supplies where the bus voltage sits at 400 VDC. The 450 mOhm maximum on-resistance at 4.5 A, 10 V gate drive gives a conduction loss of roughly 2 W at that current — manageable in a TO-220 package with 85 W maximum dissipation, but derating for ambient temperature is necessary above 100 °C junction. ## Gate charge and switching — 16 nC keeps the driver simple With a typical gate charge of 16 nC at 10 V, the gate drive power at 100 kHz switching is only about 16 mW — a standard bootstrap driver or a small PWM controller can handle it without an external driver stage. Input capacitance is 538 pF at 100 V drain bias.","metaTitle":"STP12N60M2 N-Channel MOSFET, 600 V, 9 A, TO-220","metaDescription":"STP12N60M2 N-channel MOSFET from STMicroelectronics MDmesh M2 series: 600 Vdss, 9 A continuous, 450 mOhm Rds(on).","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP12","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"450mOhm @ 4.5A, 10V","Power Dissipation (Max)":"85W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"16 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"538 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7600","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ecabc06d003b7236b153b2b038c4b001.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP12N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP12N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}