{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP11NM80","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP11NM80","canonicalUrl":"https://icboms.com/stmicroelectronics/STP11NM80","factsUrl":"https://icboms.com/api/mcp/products/STP11NM80","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP11NM80, N-Channel MOSFET, MDmesh™ series, 800V Vdss, 11A Id, 400mOhm Rds(on), TO-220-3 through-hole package, -65 to 150°C junction temperature.","salesMarkdown":"The STP11NM80: The TO-220-3 through-hole package suits point-of-load and PFC stages on aluminium or FR4 boards where the thermal pad can be bolted to a heatsink — not a surface-mount design. Gate charge is 43.6 nC at 10 V; input capacitance is 1630 pF at 25 V. Standard franchised distribution channels carry this part; independent supply is available for spot requirements. ## Temperature range and package — industrial power environments Gate threshold voltage is specified at 5 V maximum with 250 µA drain current, and the recommended drive voltage for minimum on-resistance is 10 V. This is a standard-threshold device, not a logic-level gate — a 5 V PWM from a microcontroller will not fully enhance it; a 10 V gate driver stage is required to achieve the rated 400 mOhm Rds(on).","metaTitle":"STP11NM80 N-Channel MOSFET, 800V, 11A, TO-220-3","metaDescription":"STP11NM80 N-channel 800V MOSFET from STMicroelectronics MDmesh series. 11A continuous drain, 400mOhm Rds(on) at 10V. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP11","Operating Temperature":"-65°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"400mOhm @ 5.5A, 10V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"43.6 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"1630 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.1100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/aeae5b4dc36933e1486598fd795f067b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP11NM80/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP11NM80?","answer":"This is the conduction-loss figure used for thermal design — at lower gate voltages the Rds(on) rises significantly, so a 10 V gate driver is required to achieve the rated value."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP11NM80","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP11NM80 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}