{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP11NM65N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP11NM65N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP11NM65N","factsUrl":"https://icboms.com/api/mcp/products/STP11NM65N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II series, STP11NM65N, N-Channel MOSFET, 650 V Vdss, 11 A continuous drain, 455 mOhm Rds(on) at 10 V, 29 nC gate charge, TO-220-3 through-hole package.","salesMarkdown":"## 650 V, 11 A N-channel MOSFET in TO-220-3 ## 455 mOhm on-resistance and 29 nC gate charge Maximum on-resistance is 455 mOhm at a drain current of 5.5 A and a gate drive of 10 V. The typical gate charge is 29 nC at 10 V, which together with an input capacitance of 800 pF at 50 V drain-source gives a reasonable switching figure of merit for a 650 V device. Availability is limited to surplus and broker channels.","metaTitle":"STP11NM65N N-Channel MOSFET, 650 V, 11 A, TO-220-3","metaDescription":"STP11NM65N N-channel MOSFET, 650 V Vdss, 11 A continuous drain, 455 mOhm Rds(on). MDmesh™ II series in TO-220-3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP11N","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"455mOhm @ 5.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"29 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"800 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.3600","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/b6ec1e5f988635a2635f6bcbbe8bf2ed.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP11NM65N/alternatives.json"},"ai":{"faq":[{"question":"Is STP11NM65N obsolete?","answer":"Yes, STMicroelectronics lists the STP11NM65N as Obsolete. It is no longer in production and is not recommended for new designs."},{"question":"What is the replacement for STP11NM65N?","answer":"The evidence does not list an official successor. For a pin-compatible alternative, consider other 650 V N-channel MOSFETs in the TO-220-3 package from STMicroelectronics' MDmesh series, such as the STP11NM65FP (same die in a fully isolated TO-220FP package) or newer MDmesh V devices. Verify electrical compatibility against your specific operating conditions."},{"question":"What is the difference between STP11NM65N and STP11NM65FP?","answer":"Both use the same MDmesh™ II die with 650 V, 11 A ratings. The STP11NM65N is in a standard TO-220-3 package, while the STP11NM65FP is in a fully isolated TO-220FP package, which eliminates the need for a mica insulator and provides galvanic isolation between the tab and the heatsink."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP11NM65N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP11NM65N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}