{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP11NM60FP","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP11NM60FP","canonicalUrl":"https://icboms.com/stmicroelectronics/STP11NM60FP","factsUrl":"https://icboms.com/api/mcp/products/STP11NM60FP","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STP11NM60FP, N-Channel MDmesh™ MOSFET, 600 V Vdss, 11 A Id, 450 mOhm Rds(on), TO-220-3 Full Pack, Through Hole, -55°C to 150°C.","salesMarkdown":"## Conduction loss and drive voltage Rds(on) is specified at 450 mOhm maximum with 5.5 A drain current and 10 V gate drive — that 10 V drive voltage is the minimum for guaranteed low on-resistance, so your gate driver rail needs to deliver at least 10 V, not 5 V typical of logic-level parts. The 30 nC total gate charge at 10 V means a moderate drive current requirement; a 1 A gate driver will switch the gate in about 30 ns, but the 1000 pF input capacitance at 25 V drain bias dominates the Miller plateau duration in hard-switched topologies. ST lists the STP11NM60FP as Obsolete. ## Thermal and mounting note Power dissipation is capped at 35 W at case temperature — the TO-220FP's plastic full-pack body has higher thermal resistance than a standard TO-220 with metal tab, so the real current limit in a 25°C ambient, still-air environment will be well below the 11 A rating.","metaTitle":"STP11NM60FP N-Channel 600 V MOSFET, MDmesh, TO-220FP","metaDescription":"STP11NM60FP N-channel 600 V MOSFET, 11 A, 450 mOhm Rds(on), MDmesh technology. TO-220 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"450mOhm @ 5.5A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"30 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1000 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/fb58cbeb693af0ea7de4b1ab0753ada8.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP11NM60FP/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement or equivalent for STP11NM60FP?","answer":"A functionally equivalent replacement would be a current ST MDmesh N-channel MOSFET in the same 600 V, TO-220FP package with similar Rds(on) and gate charge — for example, parts from the MDmesh DK5 or M5 series. Confirm the parametric match against your operating point before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP11NM60FP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP11NM60FP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}