{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP11NM60FDFP","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP11NM60FDFP","canonicalUrl":"https://icboms.com/stmicroelectronics/STP11NM60FDFP","factsUrl":"https://icboms.com/api/mcp/products/STP11NM60FDFP","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ N-Channel MOSFET, 600 V drain-source, 11 A continuous drain, 450 mOhm Rds(on) at 10 V, 40 nC gate charge, TO-220 Full Pack (TO-220FP) through-hole package.","salesMarkdown":"The STP11NM60FDFP: Gate charge totals 40 nC at 10 V. ## Full-pack isolation — no washer needed, but watch the thermal path Through-hole mounting (TO-220) suits point-of-load and offline power supplies where board-level rework or manual assembly is expected; the 0.50 mm pitch of a standard TO-220 footprint is straightforward for wave-solder or hand-solder processes. ## Active production — no LTB signal on this FDmesh line No franchised allocation signal — the part is in the mature phase of its cycle.","metaTitle":"STP11NM60FDFP N-Channel MOSFET, 600V 11A, FDmesh, TO-220FP","metaDescription":"STP11NM60FDFP N-Channel MOSFET, 600V drain-source, 11A continuous, 450mOhm Rds(on), 40nC gate charge, FDmesh technology, TO-220FP full-pack.","metaKeywords":null},"attributes":{"series":"FDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP11","Operating Temperature":"-","Rds On (Max) @ Id, Vgs":"450mOhm @ 5.5A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"TO-220FP","Gate Charge (Qg) (Max) @ Vgs":"40 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"900 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.4400","priceTiers":[{"qty":1,"price":"$5.44000","currency":"USD"},{"qty":10,"price":"$4.56800","currency":"USD"},{"qty":100,"price":"$3.69560","currency":"USD"},{"qty":500,"price":"$3.28500","currency":"USD"},{"qty":1000,"price":"$2.81279","currency":"USD"},{"qty":2000,"price":"$2.64854","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP11NM60FDFP/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP11NM60FDFP?","answer":"The maximum on-resistance is 450 mOhm at 5.5 A drain current with 10 V gate-to-source drive."},{"question":"What is the gate charge of STP11NM60FDFP?","answer":"Total gate charge is 40 nC maximum at 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP11NM60FDFP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP11NM60FDFP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}