{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP11NM60A","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP11NM60A","canonicalUrl":"https://icboms.com/stmicroelectronics/STP11NM60A","factsUrl":"https://icboms.com/api/mcp/products/STP11NM60A","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ N-Channel MOSFET, 600 V, 11 A, 450 mOhm, TO-220-3, Through Hole, -55°C to 150°C.","salesMarkdown":"The STP11NM60A: The through-hole TO-220-3 package is a standard, hand-solderable form factor that bolts to a heatsink or PCB, common in offline power supplies, AC-DC converters, lighting ballasts, and motor drives. The 600 V drain-source breakdown voltage provides headroom for rectified mains with margin for transients. Gate charge of 49 nC at 10 V is moderate. The 110 W power dissipation ceiling at case temperature tells you the thermal path matters. For BOM lines that need this exact part, the supply route is the independent distribution market — surplus and new-old-stock inventory sourced from overstock, decommissioned equipment, or distributor closeouts.","metaTitle":"STP11NM60A N-Channel MOSFET, 600 V, 11 A, TO-220-3","metaDescription":"STP11NM60A N-Channel MOSFET from STMicroelectronics MDmesh series. 600 V drain-source, 11 A continuous, 450 mOhm Rds(on). TO-220-3 through-hole.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP11N","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"450mOhm @ 5.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"49 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1211 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.1500","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/fa5c795a56ecdbebc1469efc505844c7.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP11NM60A/alternatives.json"},"ai":{"faq":[{"question":"What is the Vgs threshold of STP11NM60A?","answer":"The maximum gate threshold voltage is 4 V at a drain current of 250 µA. That means the device starts conducting when the gate-to-source voltage exceeds roughly 3 to 4 V, but for a fully enhanced low-resistance state you need to drive the gate to 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP11NM60A","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP11NM60A when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}