{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP11NM60","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP11NM60","canonicalUrl":"https://icboms.com/stmicroelectronics/STP11NM60","factsUrl":"https://icboms.com/api/mcp/products/STP11NM60","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ N-Channel MOSFET, 650V Vdss, 11A Id, 450mOhm Rds(on) @ 10V, TO-220-3 through-hole, -65°C to 150°C junction temperature.","salesMarkdown":"## 650 V MDmesh™ — the high-voltage switching transistor for power supplies and motor drives The STP11NM60 is an STMicroelectronics N-channel power MOSFET from the MDmesh™ series, built for high-voltage switching applications where low on-resistance and fast switching matter. Rated at 650 V drain-to-source voltage and 11 A continuous drain current, it handles the primary switch role in offline flyback converters, power-factor-correction stages, and motor-drive inverters up to a few hundred watts. ST has not issued a last-time-buy notice as of the current record, but the designation signals that the STP11NM60 is no longer the preferred choice for new product introductions. For an existing BOM line that already qualifies this MOSFET, the NRND flag means you should evaluate a drop-in or functionally equivalent replacement before a formal EOL notice appears. ## Gate charge and input capacitance — the switching-speed trade-off The 30 nC typical gate charge at 10 V and 1000 pF input capacitance at 25 V drain bias are moderate numbers for a 650 V device. A gate-driver IC capable of sourcing at least 1 A peak current will switch the STP11NM60 in the tens of nanoseconds, which keeps crossover losses low in a 100 kHz hard-switched converter. The ±25 V maximum gate-to-source rating gives margin for gate-drive overshoot if the layout is clean. ## TO-220-3 package — mounting and thermal notes Through-hole TO-220-3 package with the tab as the drain connection.","metaTitle":"STP11NM60 N-Channel MOSFET, 650V, 11A, TO-220-3","metaDescription":"STMicroelectronics STP11NM60 N-Channel MOSFET, 650V Vdss, 11A Id, 450mOhm Rds(on) at 10V. NRND status. TO-220-3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"NRND","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Not For New Designs","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STP11","Operating Temperature":"-65°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"450mOhm @ 5.5A, 10V","Power Dissipation (Max)":"160W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"30 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1000 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.2800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/14d9fdaae641a6ff2808506e8e5deedc.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP11NM60/alternatives.json"},"ai":{"faq":[{"question":"Is STP11NM60 obsolete?","answer":"It is not yet formally discontinued, but ST no longer recommends it for new designs. Existing production can continue while stock lasts or a replacement is qualified."},{"question":"What is the replacement for STP11NM60?","answer":"ST has not published an official successor order code for the STP11NM60 within the MDmesh™ family. For new designs, evaluate a current-generation 650 V N-channel MOSFET with similar or lower Rds(on) and compatible gate charge — many options from ST, Infineon, and onsemi fit the TO-220 footprint."},{"question":"Can STP11NM60 be used for motor control?","answer":"Yes. The 650 V rating and 11 A continuous current suit it for three-phase inverter stages in low-power motor drives (fractional-horsepower BLDC or induction motors), though the NRND status makes it a better fit for legacy BOM sustainment than new designs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP11NM60","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP11NM60 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}