{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STP11NM50N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STP11NM50N","canonicalUrl":"https://icboms.com/stmicroelectronics/STP11NM50N","factsUrl":"https://icboms.com/api/mcp/products/STP11NM50N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II, N-Channel MOSFET, 500 V Vdss, 8.5 A Id, 470 mOhm Rds(on) @ 4.5 A, 10 V, 19 nC Qg, TO-220-3, Through Hole, -55°C to 150°C.","salesMarkdown":"## 500 V, 8.5 A N-channel in a TO-220 — what it does STP11NM50N is an N-channel MOSFET in a through-hole TO-220-3 package. With a total gate charge of 19 nC at 10 V, the gate-drive power requirement stays low — a small driver IC can switch this FET at moderate frequencies without excessive drive losses. That means STMicroelectronics has ended production and there is no official last-time-buy window still open. The 470 mOhm Rds(on) at 4.5 A and 10 V is the on-resistance at the specified test conditions. ## Temperature range and heatsink consideration","metaTitle":"STP11NM50N N-Channel MOSFET, 500V 8.5A TO-220","metaDescription":"STP11NM50N MDmesh II N-channel MOSFET, 500V Vdss, 8.5A Id, 470mOhm Rds(on), TO-220.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STP11N","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"470mOhm @ 4.5A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"TO-220","Gate Charge (Qg) (Max) @ Vgs":"19 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"547 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ea848166e79b0d1094b262d083fcba4c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STP11NM50N/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STP11NM50N?","answer":"The maximum Rds(on) is 470 mOhm at a drain current of 4.5 A and a gate-to-source voltage of 10 V. This is the on-resistance at the specified test conditions; actual on-resistance increases with junction temperature."},{"question":"Does STP11NM50N require a heatsink?","answer":"For any continuous drain current above a few amps, a heatsink is required. The maximum power dissipation is 70 W at the case temperature, but the junction-to-ambient thermal resistance of a bare TO-220 is much higher — a heatsink is needed to keep the junction below 150°C."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STP11NM50N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STP11NM50N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}